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DE475-501N44A
RF Power MOSFET

N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
VDSS ID25
Maximum Ratings 500 500 20 30 48 288 44 30 V V V V A A A mJ
= = = =
500 V 48 A 0.11 1800W
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol
RDS(on) PDC
5 V/ns >200 V/ns 1800 W W W C/W C/W
SG1 SG2 SD1 SD2 GATE DRAIN
Tc = 25C Derate 4.0W/C above 25C Tc = 25C
730 4.5 0.08 0.20
Features
Test Conditions
Characteristic Values
TJ = 25C unless otherwise specified
min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test
typ.
max. V 5.5 100 50 1 0.11 V nA A mA S +175 C C +175 C C g
* Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * *
cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials
500 2.5
33 -55 175 -55 300 3
Advantages
* Optimized for RF and high speed
switching at frequencies to 30MHz
* Easy to mount--no insulators needed * High power density
DE475-501N44A
RF Power MOSFET
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd
VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
typ. 0.3 5500 230 130 46 5 5 5 8 162 56 70
max. pF pF pF pF ns ns ns ns nC nC nC
Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM
IF = IS, -di/dt = 100A/s, VR = 100V
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 44 288 1.5 200 0.6 14 A A V ns C A
Test Conditions
VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2%
For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715
DE475-501N44A
RF Power MOSFET
10000 Ciss Coss Crss
Capacitance in pF
1000
100 0 50 100 150 200 250 Vd s i n Vo l t s 300 350 400 450 500
475-501N44A Capacitances vs Vds
DE475-501N44A
RF Power MOSFET
501N44A DE-SERIES SPICE Model (Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 501N44A 10 20 30 * TERMINALS: D G S * 500 Volt 44 Amp 0.11 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 5.5N RD 4 1 0.11 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS
Doc #9200-0248 Rev 4 (c) 2003 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com

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